Gallium Oxide Technology Devices and Applications Metal Oxides 1st edition by Stephen Pearton 0128145226 9780128145227

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ISBN-10 ‏ : ‎0128145226

ISBN-13 ‏ : ‎ 9780128145227

Author : Stephen Pearton  

Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods.

Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application.

Gallium Oxide: Technology, Devices and Applications (Metal Oxides) 1st Table of contents:

Part One: Growth technology of Ga2O3
1: Progress in MOVPE growth of Ga2O3
Abstract
1.1 Introduction
1.2 Homoepitaxial deposition of β-Ga2O3
1.3 Heteroepitaxial deposition of β-Ga2O3
1.4 Heteroepitaxial deposition of ɛ-Ga2O3
2: MBE growth and characterization of gallium oxide
Abstract
Acknowledgments
2.1 Introduction
2.2 MBE growth of Ga2O3 and materials characterization
2.3 Current status and future prospects
2.4 Summary
3: Properties of sputter-deposited gallium oxide
Abstract
Acknowledgments
3.1 Introduction
3.2 Experimental
3.3 Results and discussion
3.4 Summary and conclusions
4: Synthesis, optical characterization, and environmental applications of β-Ga2O3 nanowires
Abstract
4.1 Introduction
4.2 Ambient controlled synthesis of β-Ga2O3 nanowires
4.3 Optical characterization of β-Ga2O3 nanowires
4.4 Photocatalytic property of β-Ga2O3 nanowires
4.5 Summary
5: Growth, properties, and applications of β-Ga2O3 nanostructures
Abstract
Acknowledgments
5.1 Introduction
5.2 Study of β-Ga2O3 nanostructures
5.3 Functional nanowires based on β-Ga2O3
5.4 Conclusions and future perspective
Part Two: Properties and Processing
6: Properties of (In,Ga)2O3 alloys
Abstract
6.1 Introduction
6.2 Overview on crystal structures observed in (In,Ga)2O3
6.3 Lattice parameters of bulk material
6.4 Thin film growth
6.5 Deep-UV absorption and band gap engineering
6.6 Phonon modes
6.7 Dielectric function and index of refraction
6.8 Schottky barrier diodes
6.9 Photodetectors
6.10 Summary and outlook
7: Low-field and high-field transport in β-Ga2O3
Abstract
Acknowledgments
7.1 Introduction
7.2 Electron-phonon interaction in β-Ga2O3
7.3 Electron mobility in β-Ga2O3
7.4 Velocity-field curves in β-Ga2O3
7.5 Summary
8: Electron paramagnetic resonance (EPR) from β-Ga2O3 crystals
Abstract
Acknowledgments
8.1 Introduction
8.2 Crystal structure of β-Ga2O3
8.3 Shallow donors and conduction electrons
8.4 Acceptors and self-trapped holes
8.5 Transition-metal and rare-earth ions
8.6 Oxygen vacancies
9: Hydrogen in Ga2O3
Abstract
9.1 Introduction
9.2 Hydrogen in the transparent conducting oxides ZnO, SnO2, and In2O3
9.3 Hydrogen in β-Ga2O3
9.4 Conclusion
Acknowlegments
10: Ohmic contacts to gallium oxide
Abstract
Acknowledgment
10.1 Introduction
10.2 Ohmic contacts and contact resistance
10.3 Ohmic contacts to gallium oxide
10.4 Development of Ohmic contacts for Ga2O3 microelectronics
10.5 Research opportunities for Ohmic contacts to Ga2O3
11: Schottky contacts to β-Ga2O3
Abstract
Acknowledgments
11.1 Introduction
11.2 Physics of Schottky contacts and SBH measurements
11.3 Properties of Ga2O3 for SBDs
11.4 Schottky contacts on β-Ga2O3: Materials and processing
11.5 Defects relevant to β-Ga2O3 Schottky contacts
11.6 Nonideal and inhomogeneous Schottky barriers
11.7 β-Ga2O3 Schottky devices
11.8 Summary
12: Dry etching of Ga2O3
Abstract
Acknowledgments
12.1 Introduction
12.2 Dry etching
12.3 Dry etching techniques
12.4 Etch results for Ga2O3
12.5 Summary
13: Band alignments of dielectrics on (− 201) β-Ga2O3
Abstract
13.1 Introduction
13.2 Methods
13.3 Band offsets
13.4 Conclusion
14: Radiation damage in Ga2O3
Abstract
Acknowledgments
14.1 Introduction
14.2 Radiation damage in wide bandgap semiconductors
14.3 Properties of Ga2O3
14.4 Radiation damage effects in Ga2O3
14.5 Summary and conclusion
Part Three: Applications
15: Ga2O3 nanobelt devices
Abstract
15.1 Introduction
15.2 β-Ga2O3-based optoelectronic nanodevice
15.3 β-Ga2O3-based nanoelectronic devices
15.4 Summary
16: Advances in Ga2O3 solar-blind UV photodetectors
Abstract
16.1 Introduction
16.2 Figures of merit for photodetectors
16.3 β-Ga2O3 UV photodetectors: Types, operational principles, and status
16.4 Gain mechanism and barrier height calculation
16.5 Comparison with AlGaN deep-UV photodetectors
16.6 Design consideration, possible geometries, and arrays of detectors for deep UV detection
16.7 Summary, conclusion/future work
17: Power MOSFETs and diodes
Abstract
17.1 Introduction
17.2 Properties
17.3 Schottky diodes
17.4 Power MOSFETs
17.5 Application space and competing technologies
17.6 Future
18: Ga2O3-photoassisted decomposition of insecticides
Abstract
Acknowledgments
18.1 Introduction
18.2 Photochemical and photocatalytic degradation reactions
18.3 Toxicity test of photodegraded intermediate products
18.4 Photocatalytic mineralization of chemical substances
18.5 Concluding remarks
19: Ga2O3-based gas sensors
Abstract
19.1 Introduction
19.2 Ga2O3-based gas sensors
19.3 Conclusions

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Tags: Gallium Oxide, Technology, Devices, Applications, Metal Oxides, Stephen Pearton