(EBook PDF) TSV 3D RF Integration High Resistivity Si Interposer Technology 1st Edition by Shenglin Ma, Yufeng Jin 0323996035 9780323996037 full chapters

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Product details:

ISBN-10 :  0323996035 

ISBN-13 : 9780323996037

Author:  Shenglin Ma, Yufeng Jin 

TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters.

TSV 3D RF Integration: High Resistivity Si Interposer Technology 1st Table of contents:

Chapter 1: Introduction to HR-Si interposer technology
Abstract
1.1: Background
1.2: 3D RF heterogeneous integration scheme
1.3: HR-Si interposer technology
1.4: TGV interposer technology
1.5: Summary
1.6: Main work of this book
References
Chapter 2: Design, process, and electrical verification of HR-Si interposer for 3D heterogeneous RF integration
Abstract
2.1: Introduction
2.2: Design and fabrication process of HR-Si TSV interposer
2.3: Design and analysis of RF transmission structure built on HR-Si TSV interposer
2.4: Research on HR-Si TSV interposer fabrication process
2.5: Electrical characteristics analysis of transmission structure on HR-Si TSV interposer
2.6: Conclusion
References
Chapter 3: Design, verification, and optimization of novel 3D RF TSV based on HR-Si interposer
Abstract
3.1: Introduction
3.2: HR-Si TSV-based coaxial-like transmission structure
3.3: Redundant RF TSV transmission structure
3.4: Sample processing and test result analysis
3.5: Optimization of HR-Si TSV interposer
3.6: Conclusion
References
Chapter 4: HR-Si TSV integrated inductor
Abstract
4.1: Introduction
4.2: HR-Si TSV interposer integrated planar inductor
4.3: Research on 3D inductor based on HR-Si interposer
4.4: Summary
References
Chapter 5: Verification of 2.5D/3D heterogeneous RF integration of HR-Si interposer
Abstract
5.1: Introduction
5.2: Four-channel 2.5D heterogeneous integrated L-band receiver
5.3: 3D heterogeneous integrated channelized frequency conversion receiver based on HR-Si interposer
5.4: Conclusions
References
Chapter 6: HR-Si interposer embedded microchannel
Abstract
6.1: Introduction
6.2: Design of a HR-Si interposer embedded microchannel
6.3: Thermal characteristics analysis of a TSV interposer embedded microchannel
6.4: Process development of a TSV interposer embedded microchannel
6.5: Characterization of cooling capacity of HR-Si interposer with an embedded microchannel
6.6: Evaluation of HR-Si interposer embedded with a cooling microchannel
6.7: Application verification of HR-Si interposer embedded with microchannel
6.8: Conclusions
References
Chapter 7: Patch antenna in stacked HR-Si interposers
Abstract
7.1: Introduction
7.2: Theoretical basis of patch antenna
7.3: Design of a patch antenna in stacked HR-Si interposers
7.4: Processing of a patch antenna in stacked HR-Si interposers
7.5: Test and analysis of patch antenna in stacked HR-Si TSV interposer
7.6: Summary
References
Chapter 8: Through glass via technology
Abstract
8.1: Introduction
8.2: TGV fabrication
8.3: Metallization of TGV
8.4: Passive devices based on TGV technology
8.5: Embedded glass fan-out wafer-level package technology
8.6: 2.5D heterogeneous integrated L-band receiver based on TGV interposer
8.7: Conclusions
References
Chapter 9: Conclusion and outlook

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Integration,High Resistivity,Interposer Technology,Shenglin Ma,Yufeng Jin